2SJ575 Overview
Key Features
- Low on-resistance R DS =2.8 Ω typ. (V GS = -10 V , I D = -50 mA) R DS =5.7 Ω typ. (V GS = -4 V , ID = -50 mA)
- 4 V gate drive device
- Small package (MPAK) Outline MPAK 3 1 D 3 2 2 G
- Drain S 1 2SJ575
| Part | 2SJ575 |
|---|---|
| Description | Silicon P Channel MOS FET High Speed Switching |
| Manufacturer | Hitachi Semiconductor |
| Size | 39.60 KB |
Related Datasheets
| Part Number | Manufacturer | Description |
|---|---|---|
| 2SJ578 | SANYO | Ultrahigh-Speed Switching Applications |
| 2SJ579 | SANYO | Ultrahigh-Speed Switching Applications |
| 2SJ574 | Renesas | P-Channel MOSFET |