2SK1169 Datasheet | Hitachi Semiconductor

Features - - - - - Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline TO-3P D G 1 2 3 1. Gate 2. Drain (Flange) 3. Source 2SK1169, 2SK1170 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage 2SK1169 2SK1170 Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at TC = 25°C VGSS ID I D(pulse)- I DR Pch- Tch Tstg 2 1 Symbol VDSS Ratings 450 500 ±30 20 80 20 120 150 - 55 to +150 Unit V V A A A W °C °C 2SK1169, 2SK1170 Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Symbol Min 2SK1169 V(BR)DSS 2SK1170 V(BR)GSS I GSS 450 500 ±30 - - - - - - ±10 250 V µA µA I G = ±100 µA, VDS = 0 VGS = ±25 V, VDS = 0 VDS = 360 V, VGS = 0 VDS = 400 V, VGS = 0 VGS(off) 2.0 - - |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr 10 - - - - - - - - - - 0.20 0.22 16 2800 780 90 32 115 200 90 1.0 500 3.0 0.25 0.27 - - - - - - - - - - S p F p F p F ns ns ns ns V ns I F = 20 A, VGS = 0 I F = 20 A, VGS = 0, di F/dt = 100 A/µs I D = 10 A, VGS = 10 V, RL = 3 Ω I D = 10 A, VDS = 10 V - 1 VDS = 10 V, VGS = 0, f = 1 MHz V Ω I D = 1 m A, VDS = 10 V I D = 10 A, VGS = 10 V - 1 Typ - Max - Unit V Test conditions I D = 10 m A, VGS = 0 Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain...