2SK1296
2SK1296 is Silicon N-Channel MOS FET manufactured by Hitachi Semiconductor.
Features
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Low on-resistance High speed switching Low drive current 4 V gate drive device
- Can be driven from 5 V source
- Suitable for motor drive, DC-DC converter, power switch and solenoid drive
1 2 3
1. Gate 2. Drain (Flange) 3. Source 3
Table 1 Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID ID(pulse)- IDR Pch-
- Tch Tstg Ratings 60 ±20 30 120 30 75 150
- 55 to +150 Unit V V A A A W °C °C
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