2SK1297
2SK1297 is Silicon N-Channel MOS FET manufactured by Hitachi Semiconductor.
Features x x x x x
Low on-resistance High speed switching Low drive current 4 V gate drive device Can be driven from 5 V source Suitable for motor drive, DC-DC converter, power switch and solenoid drive
Outline
TO-3P
D G 1 2 3 1. Gate 2. Drain (Flange) 3. Source
Absolute Maximum Ratings (Ta = 25GC)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current
.. Channel dissipation
Symbol VDSS VGSS ID ID(pulse)- IDR Pch- Tch Tstg
2 1
Ratings 60
Unit V V A A A W r20
40 160 40 100 150
- 55 to +150
Channel temperature Storage temperature Notes 1. PW d 10 Ps, duty cycle d 1% 2. Value at TC = 25q C q C q C
Electrical Characteristics (Ta = 25GC)
Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current
..
Symbol Min V(BR)DSS V(BR)GSS IGSS VGS(off) RDS(on) 60
Typ
- -
- -
- 0.015 0.02 35 3600 1850 450 30 170 700 350 1.2 155
Max
- -
Unit V V
Test conditions ID = 10 m A, VGS = 0 IG = r100 PA, VDS = 0 VGS = r16 V, VDS = 0 VDS = 50 V, VGS = 0 ID = 1 m A, VDS = 10 V ID = 20 A, VGS = 10 V
- ID = 20 A, VGS = 4 V
- VDS = 10 V, VGS = 0, f = 1 MHz
1 1 r20
- - 1.0
- - r10
250 2.0 0.018 0.025
- -
- -
- -
- -
- -
Zero gate voltage drain current IDSS Gate to source cutoff voltage Static drain to source on state resistance
PA...
