2SK1622S Datasheet | Hitachi Semiconductor

Features - Low on-resistance - High speed switching - Low drive current - 4 V gate drive device  Can be driven from 5 V source - Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline November 1996 LDPAK 123 D 12 3 1. Gate 2. Drain 3. Source 4. Drain 2SK1622(L), 2SK1622(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1. PW≤10 µs, duty cycle ≤ 1% 2. Value at TC = 25°C Symbol VDSS VGSS ID I - 1 D(pulse) IDR Pch- 2 Tch Tstg Ratings 60 ±20 25 100 25 50 150 - 55 to +150 Unit V V A A A W °C °C 2SK1622(L), 2SK1622(S) Electrical Characteristics (Ta = 25°C) Item Symbol Min Drain to source breakdown voltage V(BR)DSS Gate to source breakdown voltage V(BR)GSS ±20 Gate to source leak current IGSS Zero gate voltage drain current IDSS Gate to source cutoff voltage VGS(off) Static Drain to source on state RDS(on) resistance - -...