Download 2SK1626 Datasheet PDF
Hitachi Semiconductor
2SK1626
2SK1626 is Silicon N-Channel MOSFET manufactured by Hitachi Semiconductor.
Features - - - - - Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline TO-220FM 2 3 1. Gate 2. Drain 3. Source 2SK1626, 2SK1627 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage 2SK1626 2SK1627 Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Note 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at TC = 25°C VGSS ID I D(pulse)- I DR Pch- Tch Tstg 2 1 Symbol VDSS Ratings 450 500 ±30 5 20 5 35 150 - 55 to +150 Unit V V A A A W °C °C 2SK1626, 2SK1627 Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Symbol 2SK1626 V(BR)DSS 2SK1627 V(BR)GSS I GSS Min 450 500 ±30 - - - - - - ±10 250 V µA µA I G = ±100 µA, VDS = 0 VGS = ±25 V, VDS = 0 VDS = 360 V, VGS = 0 VDS = 400 V, VGS = 0 VGS(off) 2.0 - - |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr 2.5 - - - - - - - - - - 1.0 1.2 4.0 640 160 20 10 25 50 30 0.95 300 3.0 1.4 1.5 - - - - - - - - - - S p F p F p F ns ns ns ns V ns I F = 5 A, VGS = 0 I F = 5 A, VGS = 0, di F/dt = 100 A/µs I D = 2.5 A, VGS = 10 V, RL = 12 Ω I D = 2.5 A, VDS = 10 V - 1 VDS = 10 V, VGS = 0, f = 1 MHz V Ω I D = 1 m A, VDS = 10 V I D = 2.5 A, VGS = 10 V - 1 Typ -...