2SK168
2SK168 is Silicon N-Channel Junction FET manufactured by Hitachi Semiconductor.
Silicon N-Channel Junction FET
Application
VHF Amplifier, Mixer, Local oscillator
Outline
TO-92 (2)
1. Gate 2. Source 3. Drain 3 2 1
Absolute Maximum Ratings (Ta = 25°C)
Item Gate to drain voltage Gate to source voltage Gate current Drain current Channel power dissipation Channel temperature Storage temperature Symbol VGDO VGSS IG ID Pch Tch Tstg Ratings
- 30
- 1 10 20 200 150
- 55 to +150 Unit V V m A m A m W °C °C
Electrical Characteristics (Ta = 25°C)
Item Gate to drain breakdown voltage Gate cutoff current Drain current Gate to source cutoff voltage Forward transfer admittance Input capacitance Reverse transfer capacitance Power gain Noise figure Note: D 4 to 8 Symbol V(BR)GDO I GSS I DSS-
Min
- 30
- 4
- 8
- -
- -
Typ
- -
- - 10 6.8 0.1 27 1.7
Max
- - 10 20
- 3.0
- -
- -
- Unit V n A m A V m S p F p F d B d B
Test conditions I G =
- 100 µA, IS = 0 VGS =
- 0.5 V, VDS = 0 VDS = 5 V, VGS = 0 VDS = 5 V, ID = 10 µA VDS = 5 V, VGS = 0, f = 1 k Hz VDS = 5 V, VGS = 0, f = 1 MHz VDS = 5 V, VGS = 0, f = 1 MHz VDS = 5 V, VGS = 0, f = 100 MHz VDS = 5 V, VGS = 0, f = 100 MHz
VGS(off) |yfs| Ciss Crss PG NF
1. The 2SK168 is grouped by I DSS as follows. E 6 to 12 F 10 to 20
Maximum Channel Power Dissipation Curve Channel Power Dissipation Pch (m W) 300 Typical Output Characteristics (1) 10 VGS = 0 Drain Current ID (m A) 8
- 0.2 V 6
- 0.4 4
- 0.6 2
- 0.8
- 1.0 0 30 40 10 20 Drain to Source Voltage VDS (V)...
