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2SK1680 - N-Channel MOSFET Transistor

General Description

Drain Current ID=20A@ TC=25℃ Drain Source Voltage- : VDSS=500V(Min) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS high Current, high speed power switching ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VD

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isc N-Channel MOSFET Transistor 2SK1680 DESCRIPTION ·Drain Current –ID=20A@ TC=25℃ ·Drain Source Voltage- : VDSS=500V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·high Current, high speed power switching ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 500 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous@ TC=25℃ 20 A Ptot Total Dissipation@TC=25℃ 250 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.