2SK2529 Datasheet | Hitachi Semiconductor

Features - - - - Low on-resistance R DS(on) = 7 mΩ typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline TO-220CFM 12 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C 3. Value at Tch = 25°C, Rg ≥ 50 Ω Symbol VDSS VGSS ID I D(pulse)- I DR I AP - 3 3 2 1 Ratings 60 ±20 50 200 50 45 174 35 150 - 55 to +150 Unit V V A A A A m J W °C °C EAR- Pch- Tch Tstg Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Symbol V(BR)DSS V(BR)GSS I GSS Min 60 ±20 - - 1.0 - - Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note 1. Pulse Test |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr 35 - - - - - - - - - Typ - - - - - 7 10 55 3550 1760 500 35 230 470 360 0.85 135 Max - - ±10 10 2.0 10 16 - - - - - - - - - - Unit V V µA µA V mΩ mΩ S p F p F p F ns ns ns ns V ns I F = 50 A, VGS = 0 I F = 50 A, VGS = 0 di F / dt = 50 A / µs Test Conditions I D = 10 m A, VGS = 0 I G = ±100 µA, VDS = 0 VGS = ±16 V, VDS = 0 VDS = 60 V, VGS = 0 I D = 1 m A, VDS = 10 V I D = 25 A VGS = 10 V- 1 I D = 25 A VGS = 4 V- 1 I D = 25 A VDS = 10 V- 1 VDS = 10 V VGS = 0 f = 1 MHz I D = 25 A VGS = 10 V RL = 1.2 Ω Zero gate voltage drain current I DSS Gate to source cutoff voltage Static drain to source on state resistance VGS(off) RDS(on) Power vs. Temperature Derating 40 Pch (W) I D (A) 500 200 100 50 Maximum Safe Operation...