2SK2570
2SK2570 is Silicon N-Channel MOSFET manufactured by Hitachi Semiconductor.
Features
- Low on-resistance R DS(on) = 0. 8 Ω typ. (VGS = 4 V, I D = 100 m A)
- 2.5V gate drive devices.
- Small package (MPAK)
Outline
MPAK
3 1 2
1. Source 2. Gate 3. Drain
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Channel dissipation Channel temperature Storage temperature Note: 1. PW ≤ 10 µs, duty cycle ≤ 1 % Symbol VDSS VGSS ID I D(pulse)- Pch Tch Tstg
Ratings 20 ±10 0.2 0.4 150 150
- 55 to +150
Unit V V A A m W °C °C
Electrical Characteristics (Ta = 25°C)
Item Drain to source breakdown voltage Gate to source breakdown voltage Zero gate voltege drain current Gate to source leak current Symbol V(BR)DSS V(BR)GSS I DSS I GSS Min 20 ±10
- - 0.5
- Typ
- -
- -
- 0.8 Max
- - 1.0 ±5.0 1.5 1.1 Unit V V µA µA V Ω Ω S Test Conditions I D = 10µA, VGS = 0 I G = ±100µA, VDS = 0 VDS = 20 V, VGS = 0 VGS = ±6.5V, VDS = 0 I D = 10µA, VDS = 5V I D = 100 m A VGS = 4V
- 1
- 1.3 2.2 I D = 40 m A VGS = 2.5V
- 1 Forward transfer admittance |yfs| Ciss Coss 0.22 0.35
- I D = 100 m A VDS = 10V
- 1 Input capacitance Output capacitance
- -
- -
- -
- 45 33 9.6 20 60 240 140
- -
- -
- -
- p F p F p F ns ns ns ns VDS = 10V VGS = 0 f = 1MHz VGS = 5V, ID = 100 m A RL = 100Ω
Gate to source cutoff voltage VGS(off) Static drain to source on state RDS(on) resistance
Reverse transfer capacitance Crss Turn-on delay time Rise time Turn-off delay time Fall time Notes: 1. Pulse test 2. Marking is “ZL- ” t d(on) tr t d(off) tf
Main Characteristics...
