2SK2595 Datasheet | Hitachi Semiconductor

Features - High power output, High gain, High efficiency PG = 7.8d B, Pout = 37.3d Bm, ηD = 50 %min. (f = 836.5MHz) - pact package capable of surface mounting Outline This Device is sensitive to Elector Static Discharge. An Adequate handling procedure is requested. Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C Symbol VDSS VGSS ID I D(pulse)- Pch- Tch Tstg 2 1 Ratings 17 ±10 1.1 5 20 150 - 45 to +150 Unit V V A A W °C °C Electrical Characteristics (Ta = 25°C) Item Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Input capacitance Output capacitance Output Power Symbol I DSS I GSS VGS(off) Ciss Coss Pout Min. - - 0.6 - - 37.3 Typ - - - 68 27 38.45 Max. 10 ±5.0 1.3 - - - Unit µA µA V p F p F d Bm Test Conditions VDS = 12 V, VGS = 0 VGS = ±10V, VDS = 0 I D = 6m A, VDS = 12V VGS = 5V, VDS = 0 f = 1MHz VDS = 12V, VGS = 0 f = 1MHz VDS = 12V, f = 836.5MHz Pin = 29.5d Bm VDS = 12V Pout = 37.3d Bm f = 836.5MHz Pin = 29.5d Bm Drain Rational ηD - % Main Characteristics Package Dimensions Unit: mm When using this document, keep the following in mind: 1. This document may, wholly or partially, be subject to change without notice. 2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without Hitachi’s permission. 3. Hitachi will not be held responsible for any damage to the user that may result from accidents or any other reasons during operation of the user’s unit according to this document. 4. Circuitry and other examples described herein are meant merely to indicate the characteristics and performance of Hitachi’s semiconductor products. Hitachi assumes no responsibility for any intellectual property...