2SK2734 Datasheet | Hitachi Semiconductor

Features - Low on-resistance R DS(on) = 0.04Ω typ (at VGS = 10 V, I D = 2.5 A) - 4V gate drive devices. - Large current capacitance ID = 5 A Outline TO-92MOD. 3 S 1. Source 2. Drain 3. Gate Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Symbol VDSS VGSS ID I D(pulse)- Ratings 30 ±20 5 20 5 0.9 150 - 55 to +150 Unit V V A A A W °C °C Body to drain diode reverse drain current I DR Channel dissipation Channel temperature Storage temperature Note: 1. PW ≤ 10 µs, duty cycle ≤ 1 % Pch Tch Tstg Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Zero gate voltege drain current Gate to source leak current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note: 1. Pulse test Symbol V(BR)DSS V(BR)GSS I DSS I GSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr Min 30 ±20 - - 1.0 - - 4 - - - - - - - - - Typ - - - - - 0.04 0.055 7 550 380 155 14 80 80 65 1.0 40 Max - - 10 ±10 2.0 0.055 0.08 - - - - - - - - - - Unit V V µA µA V Ω Ω S p F p F p F ns ns ns ns V ns I F = 5A, VGS = 0 I F = 5A, VGS = 0 di F/ dt = 50A/µs Test Conditions I D = 10m A, VGS = 0 I G = ±100µA, VDS = 0 VDS = 30 V, VGS = 0 VGS = ±16V, VDS = 0 I D = 1m A, VDS = 10V I D = 2.5A, VGS = 10V- 1 I D = 2.5A, VGS = 4V- 1 I D = 2.5A, VDS = 10V- 1 VDS = 10V VGS = 0 f = 1MHz VGS = 10V, ID = 2.5A RL = 4Ω Main Characteristics Power vs. Temperature Derating 1.6 Pch (W) I D (A) 100 30 10 10 µs 100 µs Maximum Safe Operation...