2SK2736 Datasheet | Hitachi Semiconductor

Features - Low on-resistance R DS(on) = 20 mΩ typ. (VGS = 10V, ID = 15 A) - 4V gate drive devices. - High speed switching Outline TO- 220CFM G 1 2 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C Symbol VDSS VGSS ID I D(pulse)- I DR Pch- Tch Tstg 2 1 Ratings 30 ±20 30 120 30 25 150 - 55 to +150 Unit V V A A A W °C °C Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Zero gate voltege drain current Gate to source leak current Symbol V(BR)DSS V(BR)GSS I DSS I GSS Min 30 ±20 - - 1.0 - - 12 - - - - - - - - - Typ - - - - - 20 35 18 750 520 210 16 260 85 90 1.0 45 Max - - 10 ±10 2.0 28 50 - - - - - - - - - - Unit V V µA µA V mΩ mΩ S p F p F p F ns ns ns ns V ns I F = 30A, VGS = 0 I F = 30A, VGS = 0 di F/ dt = 50A/µs Test Conditions I D = 10m A, VGS = 0 I G = ±100µA, VDS = 0 VDS = 30 V, VGS = 0 VGS = ±16V, VDS = 0 I D = 1m A, VDS = 10V I D = 15A, VGS = 10V- 1 I D = 15A, VGS = 4V- 1 I D = 15A, VDS = 10V- 1 VDS = 10V VGS = 0 f = 1MHz VGS = 10V, ID = 15A RL = 0.67Ω Gate to source cutoff voltage VGS(off) Static drain to source on state RDS(on) resistance Forward transfer admittance Input capacitance Output capacitance RDS(on) |yfs| Ciss Coss Reverse transfer capacitance Crss Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note: 1. Pulse test t d(on) tr t d(off) tf VDF t rr See characteristics curves of 2SK2684 Main Characteristics Power vs. Temperature Derating 40 Pch (W) I D (A) Maximum Safe Operation Area 500 200 100 50...