2SK2796L
2SK2796L is Silicon N-Channel MOSFET manufactured by Hitachi Semiconductor.
Features
- Low on-resistance R DS(on) = 0.12Ω typ.
- 4V gate drive devices.
- High speed switching
Outline
DPAK |1
D 1 2 G 3
1 2
1. Gate 2. Drain 3. Source 4. Drain
2SK2796(L), 2SK2796(S)
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR I AP
Note3 Note3 Note2 Note1
Ratings 60 ±20 5 20 5 5 2.14 20 150
- 55 to +150
Unit V V A A A A m J W °C °C
Pch Tch
Tstg
1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C 3. Value at Tch = 25°C, Rg ≥ 50 Ω
2SK2796(L), 2SK2796(S)
Electrical Characteristics (Ta = 25°C)
Item Symbol Min 60 ±20
- - 1.0
- - 2.5
- -
- -
- -
- -
- Typ
- -
- -
- 0.12 0.16 4.0 180 90 30 9 25 35 55 1.0 40 Max
- - 10 ±10 2.0 0.16 0.25
- -...
