2SK2828 Datasheet | Hitachi Semiconductor

Features - - - - - - Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC- DC converter Avalanche ratings Outline TO- 3P D 2 1 G 3 S 1. Gate 2. Drain (Flange) 3. Source Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Note: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C Symbol VDSS VGSS ID I D(pulse)- I DR Pch- Tch Tstg 2 1 Ratings 700 ±30 12 48 12 175 150 - 55 to +150 Unit V V A A A W °C °C Electrical Characteristics (Ta = 25°C) Item Symbol Min 700 ±30 - - 2.0 - 5.5 - - - - - - - - - - - - Typ - - - - - 0.9 9.0 1850 400 45 35 8 10 25 65 140 55 0.95 2.5 Max - - ±10 100 3.0 1.2 - - - - - - - - - - - - - Unit V V µA µA V Ω S p F p F p F nc nc nc ns ns ns ns V µs I F = 12A, VGS = 0 I F = 12A, VGS = 0 di F/ dt =100A/µs Test Conditions I D = 10m A, VGS = 0 I G = ±100µA, VDS = 0 VGS = ±25V, VDS = 0 VDS = 560 V, VGS = 0 I D = 1m A, VDS = 10V- 3 I D = 6A, VGS = 10V- 3 I D = 6A, VDS = 10V- 3 VDS = 10V VGS = 0 f = 1MHz VDD = 400V VGS = 10V I D = 12A I D = 6A, RL = 5Ω VGS = 10V Drain to source breakdown voltage V(BR)DSS Gate to source breakdown voltage V(BR)GSS Gate to source leak current Zero gate voltege drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body- drain diode forward voltage Body- drain diode reverse recovery time Note: 3. Pulse test I GSS I DSS VGS(off) RDS(on) |yfs| Ciss Coss Crss Qg Qgs Qgd t d(on) tr t d(off) tf VDF t...