2SK2851 Datasheet | Hitachi Semiconductor

Features - Low on-resistance R DS(on) = 0.055Ω typ. (at VGS = 10 V, I D = 2.5 A) - 4V gate drive devices. - Large current capacitance ID = 5 A Outline TO-92MOD. 3 S 1. Source 2. Drain 3. Gate Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Ta = 25°C 3. Value at Tch = 25°C, Rg ≥ 50 Ω Symbol VDSS VGSS ID I D(pulse)- I DR I AP - 3 3 2 1 Ratings 60 ±20 5 20 5 5 2.14 0.9 150 - 55 to +150 Unit V V A A A A m J W °C °C EAR- Pch- Tch Tstg Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Zero gate voltege drain current Gate to source leak current Gate to source cutoff voltage Symbol V(BR)DSS V(BR)GSS I DSS I GSS VGS(off) Min 60 ±20 - - 1.0 - - 5 - - - - - - - - - Typ - - - - - 0.055 0.07 7 500 260 110 10 30 100 75 0.9 50 Max - - 10 ±10 2.0 0.07 0.1 - - - - - - - - - - Unit V V µA µA V Ω Ω S p F p F p F ns ns ns ns V ns I D = 5A, VGS = 0 I F = 5A, VGS = 0 di F/ dt = 50A/µs Test Conditions I D = 10m A, VGS = 0 I G = ±100µA, VDS = 0 VDS = 60 V, VGS = 0 VGS = ±16V, VDS = 0 I D = 1m A, VDS = 10V I D = 2.5A, VGS = 10V- 1 I D = 2.5A, VGS = 4V- 1 I D = 2.5A, VDS = 10V- 1 VDS = 10V VGS = 0 f = 1MHz VGS = 10V, ID = 2.5A RL = 12Ω Static drain to source on state RDS(on) resistance Forward transfer admittance Input capacitance Output capacitance RDS(on) |yfs| Ciss Coss Reverse transfer capacitance Crss Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note: 1. Pulse test t d(on) tr t d(off) tf VDF t...