2SK2885L Datasheet | Hitachi Semiconductor

Features - Low on-resistance R DS(on) = 10mΩ typ. - 4V gate drive devices. - High speed switching Outline LDPAK 4 4 D 1 1 G 2 3 1. Gate 2. Drain 3. Source 4. Drain 2SK2885(L), 2SK2885(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C Symbol VDSS VGSS ID I D(pulse)- I DR Pch- Tch Tstg 2 1 Ratings 30 ±20 45 180 45 75 150 - 55 to +150 Unit V V A A A W °C °C 2SK2885(L), 2SK2885(S) Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Zero gate voltege drain current Gate to source leak current Symbol V(BR)DSS V(BR)GSS I DSS I GSS Min 30 ±20 - - 1.0 - - 20 - - - - - - - - - Typ - - - - - 10 15 30 1570 1100 410 32 300 180 200 1.0 75 Max - - 10 ±10 2.0 14 25 - - - - - - - - - - Unit V V µA µA V mΩ mΩ S p F p F p F ns ns ns ns V ns I F = 45A, VGS = 0 I F = 45A, VGS = 0 di F/ dt = 50A/µs Test Conditions I D = 10m A, VGS = 0 I G = ±100µA, VDS = 0 VDS = 30 V, VGS = 0 VGS = ±16V, VDS = 0 I D = 1m A, VDS = 10V I D = 20A, VGS = 10V- 1 I D = 20A, VGS = 4V- 1 I D = 20A, VDS = 10V- 1 VDS = 10V VGS = 0 f = 1MHz VGS = 10V, ID = 20A RL = 0.5Ω Gate to source cutoff voltage VGS(off) Static drain to source on state RDS(on) resistance Forward transfer admittance Input capacitance Output capacitance RDS(on) |yfs| Ciss...