2SK291 Datasheet | Hitachi Semiconductor

Silicon N-Channel Junction FET Application Low frequency low noise amplifier Outline TO-92 (2) 1. Drain 2. Source 3. Gate 3 2 1 Absolute Maximum Ratings (Ta = 25°C) Item Gate to drain voltage Gate to source voltage Drain current Gate current Channel power dissipation Channel temperature Storage temperature Symbol VGDO VGSO ID IG Pch Tch Tstg Ratings - 15 - 15 50 5 300 150 - 55 to +150 Unit V V m A m A m W °C °C Electrical Characteristics (Ta = 25°C) Item Gate to drain breakdown voltage Gate to source breakdown voltage Gate cutoff current Drain current Gate to source cutoff voltage Forward transfer admittance Input capacitance Symbol V(BR)GDO V(BR)GSO I GSS I DSS- Min - 15 - 15 - 5 - 25 - - Typ - - - - - 45 8.5 1.2 Max - - 10 50 - 3.0 - - - Unit V V n A m A V m S p F Test conditions I G = - 100 µA I G = - 100 µA VGS = - 7 V, VDS = 0 VDS = 5 V, VGS = 0 VDS = 5 V, ID = 100 µA VDS = 5 V, VGS = 0, f = 1 k Hz VDS = 5 V, VGS = 0, f = 1 MHz VGS(off) |yfs| Ciss Noise voltage referred to input en Note: Grade I DSS n V/ √Hz VDS = 5 V, ID = 5 m A, Rg = 0, f = 100 k Hz T 36 to 50 1. The 2SK291 is grouped by I DSS as follows. P 5 to 16 Q 14 to 24 R 20 to 32 S 28 to 42 Maximum Channel Power Dissipation Curve Channel Power Dissipation Pch (m W) 450 Typical Output Characteristics 30 VDS = 5 V Drain Current ID (m A) V GS = 0 -...