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2SK2911 - N-Channel Silicon MOSFET

Datasheet Summary

Features

  • Low ON-resistance.
  • Ultrahigh-speed switching.
  • 2.5V drive. Package Dimensions unit:mm 2091A [2SK2911] 0.5 0.4 3 0.16 0 to 0.1 1 0.95 0.95 2 1.9 2.9 0.8 1.1 0.5 1.5 2.5 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Conditions 1 : Gate 2 : Source.

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Datasheet Details

Part number 2SK2911
Manufacturer Sanyo Semicon Device
File Size 229.72 KB
Description N-Channel Silicon MOSFET
Datasheet download datasheet 2SK2911 Datasheet
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Full PDF Text Transcription

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Ordering number:ENN6313 N-Channel Silicon MOSFET 2SK2911 Ultrahigh-Speed Switching Applications Features · Low ON-resistance. · Ultrahigh-speed switching. · 2.5V drive. Package Dimensions unit:mm 2091A [2SK2911] 0.5 0.4 3 0.16 0 to 0.1 1 0.95 0.95 2 1.9 2.9 0.8 1.1 0.5 1.5 2.5 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Conditions 1 : Gate 2 : Source 3 : Drain SANYO : CP Ratings 100 ±10 0.25 1 0.
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