Datasheet4U Logo Datasheet4U.com

2SK2919 - N-Channel Silicon MOSFET

Datasheet Summary

Features

  • Low ON resistance.
  • Ultrahigh-speed switching.
  • On-chip high-speed diode (trr=100ns). Package Dimensions unit:mm 2128 [2SK2919] 8.2 7.8 6.2 3 0.4 0.2 0.6 4.2 1.2 8.4 10.0 1.0 2.54 1 2 1.0 2.54 0.3 0.6 5.08 10.0 6.0 6.2 5.2 7.8 0.7 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS I.

📥 Download Datasheet

Datasheet preview – 2SK2919

Datasheet Details

Part number 2SK2919
Manufacturer Sanyo Semicon Device
File Size 106.48 KB
Description N-Channel Silicon MOSFET
Datasheet download datasheet 2SK2919 Datasheet
Additional preview pages of the 2SK2919 datasheet.

📁 Similar Datasheet

  • 2SK291 - Silicon N-Channel Junction FET (Hitachi Semiconductor)
  • 2SK2912 - Silicon N Channel MOS FET (Hitachi Semiconductor)
  • 2SK2912L - Silicon N Channel MOS FET (Hitachi Semiconductor)
  • 2SK2912L - N-Channel 60V MOSFET (VBsemi)
  • 2SK2912S - Silicon N Channel MOS FET (Hitachi Semiconductor)
  • 2SK2914 - Silicon N Channel MOS Type Field Effect Transistor (Toshiba Semiconductor)
  • 2SK2915 - N-Channel MOSFET (Toshiba Semiconductor)
  • 2SK2916 - Silicon N Channel MOS Type Field Effect Transistor (Toshiba Semiconductor)
  • 2SK2917 - N-Channel MOSFET (Toshiba Semiconductor)
  • 2SK2917 - N-Channel MOSFET (INCHANGE)
Other Datasheets by Sanyo Semicon Device

Full PDF Text Transcription

Click to expand full text
Ordering number:ENN6121 N-Channel Silicon MOSFET 2SK2919 Ultrahigh-Speed Switching Applications Features · Low ON resistance. · Ultrahigh-speed switching. · On-chip high-speed diode (trr=100ns). Package Dimensions unit:mm 2128 [2SK2919] 8.2 7.8 6.2 3 0.4 0.2 0.6 4.2 1.2 8.4 10.0 1.0 2.54 1 2 1.0 2.54 0.3 0.6 5.08 10.0 6.0 6.2 5.2 7.8 0.7 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg Tc=25°C Conditions Ratings 1 : Gate 2 : Source 3 : Drain SANYO : ZP 2.
Published: |