2SK2919
Features
- Low ON resistance.
- Ultrahigh-speed switching.
- On-chip high-speed diode (trr=100ns).
Package Dimensions unit:mm 2128
[2SK2919]
8.2 7.8 6.2 3
0.4 0.2
8.4 10.0
1.0 2.54
1.0 2.54
0.3 0.6
5.08 10.0 6.0
6.2 5.2
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg Tc=25°C Conditions Ratings
1 : Gate 2 : Source 3 : Drain SANYO : ZP
Unit 600 ±30 2 8 35 150 V V A A W ˚C ˚C
- 55 to +150
Electrical Characteristics at Ta = 25˚C
Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Symbol V(BR)DSS IDSS IGSS VGS(off) | yfs | RDS(on) Ciss...
