2SK2912L Datasheet Silicon N Channel Mos Fet

Manufacturer: Hitachi Semiconductor (now Renesas)

Overview: 2SK2912(L), 2SK2912(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-495 1st.

Datasheet Details

Part number	2SK2912L
Manufacturer	Hitachi Semiconductor (now Renesas)
File Size	53.43 KB
Description	Silicon N Channel MOS FET
Datasheet	2SK2912L_HitachiSemiconductor.pdf

Low on-resistance R DS = 15 mΩ typ.
High speed switching.
4V gate drive device can be driven from 5V source Outline LDPAK 4 4 D 1 1 G 2 3 2 3 1. Gate 2. Drain 3. Source 4. Drain S 2SK2912(L), 2SK2912(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Avalanche current Avalanche Energy Channel dissipation Channel temperature Storage temperature No.

Brand Logo	Part Number	Description	Manufacturer
	2SK2912L	N-Channel 60V MOSFET	VBsemi

Part Number	Description
2SK2912	Silicon N Channel MOS FET
2SK2912S	Silicon N Channel MOS FET
2SK291	Silicon N-Channel Junction FET
2SK2922	Silicon N Channel MOS FET
2SK2925	Silicon N-Channel MOSFET
2SK2925L	Silicon N-Channel MOSFET
2SK2925S	Silicon N-Channel MOSFET
2SK2926	Silicon N-Channel MOSFET
2SK2926L	Silicon N-Channel MOSFET
2SK2926S	Silicon N-Channel MOSFET