2SK2912 Overview
2SK2912(L), 2SK2912(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-495 1st.
2SK2912 Key Features
- Low on-resistance R DS = 15 mΩ typ
- High speed switching
- 4V gate drive device can be driven from 5V source
Datasheet Details
| Part number | 2SK2912 |
|---|---|
| Datasheet | 2SK2912_HitachiSemiconductor.pdf |
| File Size | 53.43 KB |
| Manufacturer | Hitachi Semiconductor (now Renesas) |
| Description | Silicon N Channel MOS FET |
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