The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
2SK291
Silicon N-Channel Junction FET
Application
Low frequency low noise amplifier
Outline
TO-92 (2)
1. Drain 2. Source 3. Gate 3 2 1
2SK291
Absolute Maximum Ratings (Ta = 25°C)
Item Gate to drain voltage Gate to source voltage Drain current Gate current Channel power dissipation Channel temperature Storage temperature Symbol VGDO VGSO ID IG Pch Tch Tstg Ratings –15 –15 50 5 300 150 –55 to +150 Unit V V mA mA mW °C °C
Electrical Characteristics (Ta = 25°C)
Item Gate to drain breakdown voltage Gate to source breakdown voltage Gate cutoff current Drain current Gate to source cutoff voltage Forward transfer admittance Input capacitance Symbol V(BR)GDO V(BR)GSO I GSS I DSS*
1
Min –15 –15 — 5 — 25 — —
Typ — — — — — 45 8.5 1.2
Max — — 10 50 –3.
2SK291 Datasheet
