2SK2912S
Overview
- Low on-resistance R DS = 15 mΩ typ.
- High speed switching
- 4V gate drive device can be driven from 5V source Outline LDPAK 4 4
- 1 1 G 2 3 2 3
- Drain
- Source
- Drain S
| Part | 2SK2912S |
|---|---|
| Description | Silicon N Channel MOS FET |
| Manufacturer | Hitachi Semiconductor |
| Size | 53.43 KB |
Related Datasheets
| Part Number | Manufacturer | Description |
|---|---|---|
| 2SK2912L | VBsemi | N-Channel 60V MOSFET |
| K2917 | Toshiba | 2SK2917 |
| K2915 | Toshiba | 2SK2915 |
| 2SK2918-01 | Fuji Electric | Power MOSFET |
| 2SK2919 | SANYO | N-Channel Silicon MOSFET |