2SK2912S Key Features
- Low on-resistance R DS = 15 mΩ typ
- High speed switching
- 4V gate drive device can be driven from 5V source
- Part: 2SK2912S
- Manufacturer: Hitachi Semiconductor
- Size: 53.43 KB
Other 2SK2912S Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
VBsemi |
2SK2912L | N-Channel 60V MOSFET |
2SK2912S Description
2SK2912(L), 2SK2912(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-495 1st.