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2SK2912(L), 2SK2912(S)
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-495 1st. Edition Features
• Low on-resistance R DS = 15 mΩ typ. • High speed switching • 4V gate drive device can be driven from 5V source
Outline
LDPAK
4 4
D 1 1 G 2 3
2
3
1. Gate 2. Drain 3. Source 4. Drain
S
2SK2912(L), 2SK2912(S)
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Avalanche current Avalanche Energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C 3.
2SK2912S Datasheet
