| Part Number | 2SK2912L Datasheet |
|---|---|
| Manufacturer | Hitachi Semiconductor |
| Overview |
2SK2912(L), 2SK2912(S)
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-495 1st. Edition Features
• Low on-resistance R DS = 15 mΩ typ. • High speed switching • 4V gate drive device can b.
* Low on-resistance R DS = 15 mΩ typ. * High speed switching * 4V gate drive device can be driven from 5V source Outline LDPAK 4 4 D 1 1 G 2 3 2 3 1. Gate 2. Drain 3. Source 4. Drain S 2SK2912(L), 2SK2912(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source volt. |
2SK2912L Datasheet and Specifications PDF
The 2SK2912L is a Silicon N Channel MOS FET.
| Part Number | 2SK2912L Datasheet |
|---|---|
| Description | N-Channel 60V MOSFET |
| Manufacturer | VBsemi |
| Overview |
2SK2912L-VB
2SK2912L-VB Datasheet
N-Channel 60-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
60
0.011 at VGS = 10 V
0.013 at VGS = 4.5 V
ID (A)a 60 50
TO-220AB
S D G
FEATURES • 175 °C .
* 175 °C Junction Temperature * Trench Power MOSFET * Material categorization: D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) Parameter Symbol Limit Unit Gate-Source Voltage VGS ± 20 V Continuous Drain Current (TJ = 175 °C)b TC = 25 °C. |