2SK2925 Datasheet | Hitachi Semiconductor

Features - Low on-resistance R DS =0.060 Ω typ. - High speed switching - 4V gate drive device can be driven from 5V source Outline DPAK- 2 D 1 2 G 3 1 2 1. Gate 2. Drain 3. Source 4. Drain 2SK2925(L),2SK2925(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR I AP Note3 Note3 Note2 Note1 Ratings 60 ±20 10 40 10 10 8.5 20 150 - 55 to +150 Unit V V A A A A m J W °C °C Pch Tch Tstg 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C 3. Value at Tch = 25°C, Rg ≥ 50Ω 2SK2925(L),2SK2925(S) Electrical Characteristics (Ta = 25°C) Item Symbol Min 60 ±20 - - 1.5 - - 5 - - - - - - - - - Typ - - - - - 0.060 0.095 8 350 190 70 10 55 60 70 0.9 50 Max - - ±10 10 2.5 0.080 0.160 - -...