2SK2926S
2SK2926S is Silicon N-Channel MOSFET manufactured by Hitachi Semiconductor.
Features
- Low on-resistance R DS(on) = 0.042Ω typ.
- 4V gate drive devices.
- High speed switching
Outline
DPAK- 2
D 1 2 G 3
1 2
1. Gate 2. Drain 3. Source 4. Drain
2SK2926(L), 2SK2926(S)
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Ta = 25°C 3. Value at Ta = 25°C, Rg ≥ 50 Ω Symbol VDSS VGSS ID I D(pulse)- I DR I AP
- 3 3 2 1
Ratings 60 ±20 15 60 15 15 19 25 150
- 55 to +150
Unit V V A A A A m J W °C °C
EAR-
Pch- Tch Tstg
2SK2926(L), 2SK2926(S)
Electrical Characteristics (Ta = 25°C)
Item Drain to source breakdown voltage Gate to source breakdown voltage Zero gate voltege drain current Gate to source leak current Symbol V(BR)DSS V(BR)GSS I DSS I GSS Min 60 ±20
- - 1.5
- - 7
- -
- -
- -
- -
- Typ
- -
- -
- 0.042 0.065 11 500 260 110 10 80 100 110 1.0 55 Max
- - 10 ±10 2.5 0.055 0.11
- -
- -
- -...
