2SK2956 Datasheet | Hitachi Semiconductor

Features - Low on-resistance R DS(on) = 7mΩ typ. - 4V gate drive devices. - High speed switching Outline TO- 220CFM G 1 2 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Note: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C Symbol VDSS VGSS ID I D(pulse) I DR Pch Tch Tstg Note2 Note1 Ratings 30 ±20 50 200 50 35 150 - 55 to +150 Unit V V A A A W °C °C Electrical Characteristics (Ta = 25°C) Item Symbol Min 30 ±20 - - 1.0 - - 25 - - - - - - - - - Typ - - - - - 7.0 12 45 2000 1500 350 20 330 190 190 0.95 60 Max - - 10 ±10 2.0 10 18 - - - - - - - - - - Unit V V µA µA V mΩ mΩ S p F p F p F ns ns ns ns V ns I F = 50A, VGS = 0 I F = 50A, VGS = 0 di F/ dt =50A/µs Test Conditions I D = 10m A, VGS = 0 I G = ±100µA, VDS = 0 VDS = 30 V, VGS = 0 VGS = ±16V, VDS = 0 I D = 1m A, VDS = 10V I D = 25A, VGS = 10V Note3 I D = 25A, VGS = 4V Note3 I D = 25A, VDS = 10V Note3 VDS = 10V VGS = 0 f = 1MHz VGS = 10V, ID = 25A RL = 0.4Ω Drain to source breakdown voltage V(BR)DSS Gate to source breakdown voltage V(BR)GSS Zero gate voltege drain current Gate to source leak current Gate to source cutoff voltage Static drain to source on state resistance Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body- drain diode forward voltage Body- drain diode reverse recovery time Note: 3. Pulse test I DSS I GSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr Main Characteristics Power vs. Temperature Derating 40 1000 300 Pch (W) I D (A) Maximum Safe Operation Area PW...