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2SK2956
Silicon N Channel MOS FET High Speed Power Switching
Features
• Low on-resistance RDS(on) = 7 mΩ typ.
• 4 V gate drive devices. • High speed switching
Outline
REJ03G1056-0401 (Previous: ADE-208-566B)
Rev.4.01 Apr 27, 2006
RENESAS Package code: PRSS0003AE-A (Package name: TO-220C•FM)
D
G
1. Gate 2. Drain 3. Source
12 3
S
Rev.4.01 Apr 27, 2006 page 1 of 6
2SK2956
Absolute Maximum Ratings
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 %
2.
2SK2956 Datasheet
