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2SK2957(L), 2SK2957(S)
Silicon N Channel MOS FET High Speed Power Switching
REJ03G1057-0600 (Previous: ADE-208-567D) Rev.6.00 Sep 07, 2005
Features
• Low on-resistance RDS(on) = 7 mΩ typ. • 4 V gate drive devices. • High speed switching
Outline
RENESAS Package code: PRSS0004AE-A (Package name: LDPAK(L))
4 4 G
RENESAS Package code: PRSS0004AE-B (Package name: LDPAK(S)-(1))
D 1. Gate 2. Drain 3. Source 4. Drain
1 1 2 3
2
3 S
Rev.4.00 Sep 07, 2005 page 1 of 7
2SK2957(L), 2SK2957(S)
Absolute Maximum Ratings
(Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10µs, duty cycle ≤ 1 % 2.
2SK2957S Datasheet
