Datasheet Summary
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-564B (Z) 3rd. Edition Jun 1998 Features
- Low on-resistance R DS =0.010 Ω typ.
- High speed switching
- 4V gate drive device can be driven from 5V source
Outline
TO- 3P
1. Gate 2. Drain (Flange) 3....
