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2SK2955 Datasheet Silicon N-channel MOSFET

Manufacturer: Hitachi Semiconductor (now Renesas)

Overview: 2SK2955 Silicon N Channel MOS FET High Speed Power Switching ADE-208-564B (Z) 3rd.

Key Features

  • Low on-resistance R DS =0.010 Ω typ.
  • High speed switching.
  • 4V gate drive device can be driven from 5V source Outline TO.
  • 3P D G 1 S 2 3 1. Gate 2. Drain (Flange) 3. Source 2SK2955 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS V.

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