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2SK2958(L),2SK2958(S)
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-568B (Z) 3rd. Edition Jun 1998 Features
• Low on-resistance R DS(on) = 5.5mΩ typ. • 4V gate drive devices. • High speed switching
Outline
LDPAK
4 D 4
1 G 1
2
3
2
3
S
1. Gate 2. Drain 3. Source 4. Drain
2SK2958(L),2SK2958(S)
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Note: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C Symbol VDSS VGSS ID I D(pulse) I DR Pch Tch Tstg
Note2 Note1
Ratings 30 ±20 75 300 75 100 150 –55 to +150
Unit V V A A A W °C °C
Electrical Characteristics (Ta = 25°C)
Item Symbol Min 30 ±20 — — 1.
2SK2958L Datasheet
