Datasheet Summary
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-566B (Z) 3rd. Edition Jun 1998 Features
- Low on-resistance R DS(on) = 7mΩ typ.
- 4V gate drive devices.
- High speed switching
Outline
TO- 220CFM
G 1 2 3
1. Gate 2. Drain 3....
