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2SK2956 Datasheet Silicon N-channel MOSFET

Manufacturer: Hitachi Semiconductor (now Renesas)

Overview: 2SK2956 Silicon N Channel MOS FET High Speed Power Switching ADE-208-566B (Z) 3rd.

Key Features

  • Low on-resistance R DS(on) = 7mΩ typ.
  • 4V gate drive devices.
  • High speed switching Outline TO.
  • 220CFM D G 1 2 3 S 1. Gate 2. Drain 3. Source 2SK2956 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Note: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C Symbol VDSS VGSS ID I D(pul.

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