Datasheet Summary
Silicon N Channel MOS FET High Speed Power Switching
REJ03G1055-0400 (Previous: ADE-208-564B) Rev.4.00 Sep 07, 2005
Features
- Low on-resistance RDS =0.010 Ω typ.
- High speed switching
- 4 V gate drive device can be driven from 5 V source
Outline
RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P)
D G 1. Gate 2. Drain (Flange) 3. Source
S 3
Rev.4.00 Sep 07, 2005 page 1 of...
