| Part Number | 2SK2955 |
|---|---|
| Manufacturer | Hitachi Semiconductor |
| Overview |
2SK2955
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-564B (Z) 3rd. Edition Jun 1998 Features
• Low on-resistance R DS =0.010 Ω typ. • High speed switching • 4V gate drive device can b.
* Low on-resistance R DS =0.010 Ω typ. * High speed switching * 4V gate drive device can be driven from 5V source Outline TO *3P D G 1 S 2 3 1. Gate 2. Drain (Flange) 3. Source 2SK2955 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drai. |