2SK2978 Datasheet | Hitachi Semiconductor

Features - Low on-resistance R DS(on) = 0.09 Ω typ. (V GS = 4 V, ID = 1.5 A) - Low drive current - High speed switching - 2.5V gate drive devices. Outline UPAK 1. Gate 2. Drain 3. Source 4. Drain Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Symbol VDSS VGSS ID I D(pulse) Note1 Ratings 20 ±10 2.5 5 2.5 Unit V V A A A W °C °C Body-drain diode reverse drain current I DR Channel dissipation Channel temperature Storage temperature Note: Pch Tch Tstg Note2 1 150 - 55 to +150 1. PW ≤ 10µs, duty cycle ≤ 1 % 2. When using the alumina ceramic board (12.5 x 20 x 0.7 mm) Electrical Characteristics (Ta = 25°C) Item Symbol Min 20 ±10 - - 0.5 - - 3.0 - - - - - - - - - Typ - - - - - 0.09 0.12 5.0 260 150 75 15 70 55 70 0.9 75 Max - - 10 ±10 1.5 0.12 0.20 - - - - - - - - - - Unit V V µA µA V Ω Ω S p F p F p F ns ns ns ns V ns I F = 2.5A, VGS = 0 I F = 2.5A, VGS = 0 di F/ dt =50A/µs Test Conditions I D = 10m A, VGS = 0 I G = ±100µA, VDS = 0 VDS = 20 V, VGS = 0 VGS = ±8V, VDS = 0 I D = 1m A, VDS = 10V I D = 1.5A, VGS = 4V Note3 I D = 1.5A, VGS = 2.5V Note3 I D = 1.5A, VDS = 10V Note3 VDS = 10V VGS = 0 f = 1MHz VGS = 4V, I D = 1.5A RL = 6.67 Ω Drain to source breakdown voltage V(BR)DSS Gate to source breakdown voltage V(BR)GSS Zero gate voltege drain current Gate to source leak current Gate to source cutoff voltage Static drain to source on state resistance Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time I DSS I GSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss t d(on) tr t d(off) tf Body- drain diode forward voltage VDF Body- drain diode reverse recovery time Note: 3. Pulse test 4. Marking is “ZY” t rr Main Characteristics Power vs. Temperature Derating...