2SK2980 Datasheet | Hitachi Semiconductor

Features - Low on-resistance R DS(on) = 0. 2 Ω typ. (VGS = 4 V, I D = 500 m A) - 2.5V gate drive devices. - Small package (MPAK) Outline MPAK 3 1 1. Source 2. Gate 3. Drain Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Symbol VDSS VGSS Ratings 30 +12 - 10 Drain current Drain peak current Channel dissipation Channel temperature Storage temperature Note: ID I D(pulse) Pch Tch Tstg Note1 Note2 Unit V V V A A W °C °C 1.0 4 0.8 150 - 55 to +150 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at when using alumina ceramic board (12.5 x 20 x 0.7 mm) Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Zero gate voltege drain current Gate to source leak current I DSS I GSS Symbol V(BR)DSS V(BR)GSS Min 30 +12 - 10 - - 0.5 - Typ - - - - - - 0.2 Max - - - 1.0 ±5.0 1.5 0.28 Unit V V V µA µA V Ω Ω S Test Conditions I D = 100µA, VGS = 0 I G = +100 µA, VDS = 0 I G = - 100µA, VDS = 0 VDS = 30 V, VGS = 0 VGS = ±8V, VDS = 0 I D = 10µA, VDS = 5V I D = 500 m A VGS = 4V Note3 - 0.3 0.5 I D = 500 m A VGS = 2.5V Note3 1.2 2.0 - I D = 500 m A VDS = 10V Note3 Input capacitance Output capacitance Ciss Coss - - - - - - - 155 75 35 12 30 35 30 - - - - - - - p F p F p F ns ns ns ns VDS = 10V VGS = 0 f = 1MHz VGS = 4V, ID = 500 m A RL = 20Ω Gate to source cutoff voltage VGS(off) Static drain to source on state RDS(on) resistance Static drain to source on state RDS(on) resistance Forward transfer admittance |yfs| Reverse transfer capacitance Crss Turn-on delay time Rise time Turn-off delay time Fall time Note: 3. Pulse test 4. Marking is “ZZ- ” t d(on) tr t d(off)...