2SK3163 Datasheet | Hitachi Semiconductor

Features - Low on-resistance R DS(on) = 6 mΩ typ. - Low drive current - 4 V gate drive device can be driven from 5 V source Outline TO- 3P 1. Gate 2. Drain (Flange) 3. Source Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR I AP Note 3 Note 3 Note 2 Note 1 Ratings 60 ±20 75 300 75 50 214 110 150 - 55 to +150 Unit V V A A A A m J W °C °C EAR Pch Tch Tstg 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. Value at Tch = 25°C, Rg ≥ 50 Ω Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source leak current Zero gate voltege drain current Symbol V(BR)DSS I GSS I DSS Min 60 - - 1.0 - - |yfs| Ciss Coss 50 - - - - - - - - - - - - Typ - - - - 6.0 8.0 80 7100 1000 280 125 25 25 60 300 520 330 1.05 90 Max - ±0.1 10 2.5 7.5 12 - - - - - - - - - - - - - Unit V µA µA V mΩ mΩ S p F p F p F nc nc nc ns ns ns ns V ns I F = 75 A, VGS = 0 I F = 75 A, VGS = 0 di F/ dt = 50 A/ µs Test Conditions I D = 10 m A, VGS = 0 VGS = ±20 V, VDS = 0 VDS = 60 V, VGS = 0 I D = 1 m A, VDS = 10 V Note Gate to source cutoff voltage VGS(off) Static drain to source on state RDS(on) resistance Forward transfer admittance Input capacitance Output...