2SK3211 Datasheet | Hitachi Semiconductor

Features - - - Low on-resistance RDS = 60 mΩ typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline LDPAK 4 4 1 1 1. Gate 2. Drain 3. Source 4. Drain Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID ID(pulse)- 1 IDR IAP - 3 3 2 Ratings 200 ±20 25 100 25 25 41 100 150 - 55 to +150 Unit V V A A A A m J W °C °C EAR- Tch Pch - Tstg 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. Value at Tch = 25°C, Rg ≥ 50 Ω Electrical Characteristics (Ta = 25°C) Item Symbol Min 200 ±20 - - 1.0 - - 18 - - - - - - - - - Typ - - - - - 60 65 30 2420 790 340 20 230 590 330 0.95 230 Max - - ±10 10 2.5 75 85 - - - - - - - - - - Unit V V µA µA V mΩ mΩ S p F p F p F ns ns ns ns V ns IF = 25 A, VGS = 0 IF = 25 A, VGS = 0 di F/ dt = 50 A/ µs Test Conditions ID = 10 m A, VGS = 0 IG = ±100 µA, VDS = 0 VGS = ±16 V, VDS = 0 VDS = 200 V, VGS = 0 ID = 1 m A, VDS = 10 V ID = 15 A, VGS = 10 V- 4 ID = 15 A, VGS = 4 V- 4 ID = 15 A, VDS = 10 V - 4 VDS = 10 V VGS = 0 f = 1 MHz ID = 15 A, VGS = 10 V RL = 2 Ω Drain to source breakdown voltage V(BR)DSS Gate to source breakdown voltage Gate to source leak current Zero gate voltege drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body- drain diode forward voltage Body- drain diode reverse recovery time Note: 4. Pulse test V(BR)GSS IGSS IDSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss td(on) tr td(off) tf VDF...