2SK3228 Datasheet | Hitachi Semiconductor

Features - Low on-resistance R DS(on) =6mΩ typ. - Low drive current - 4V gate drive device can be driven from 5V source Outline TO- 220AB 1 2 S 3 1. Gate 2. Drain(Flange) 3. Source Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse)- I DR I AP - 3 3 2 1 Ratings 80 ±20 75 300 75 50 181 100 150 - 55 to +150 Unit V V A A A A m J W °C °C EAR- Pch- Tch Tstg 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C 3. Value at Tch = 25°C, Rg ≥ 50Ω Electrical Characteristics (Ta = 25°C) Item Symbol Min 80 - - 1.0 - - |yfs| Ciss Coss Crss Qg Qgs Qgd t d(on) tr t d(off) tf VDF t rr 55 - - - - - - - - - - - - Typ - - - - 6.0 8.0 90 9700 1250 290 150 30 30 80 300 770 370 1.05 90 Max - ±0.1 10 2.5 7.5 12 - - - - - - - - - - - - - Unit V µA µA V mΩ mΩ S p F p F p F nc nc nc ns ns ns ns V ns I F = 75A, VGS = 0 I F = 75A, VGS = 0 di F/ dt =50A/µs Test Conditions I D = 10m A, VGS = 0 VGS = ±20V, VDS = 0 VDS = 80 V, VGS = 0 I D = 1m A, VDS = 10V- 1 I D = 40A, VGS = 10V- 1 I D = 40A, VGS = 4V- 1 I D = 40A, VDS = 10V- 1 VDS = 10V VGS = 0 f = 1MHz VDD = 25V VGS = 25V I D = 75A VGS = 10V, ID = 40A RL = 0.75Ω Drain to source breakdown voltage V(BR)DSS Gate to source leak current Zero gate voltege drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body- drain diode forward voltage Body- drain diode reverse recovery time Note: 1. Pulse test I GSS I DSS VGS(off) RDS(on) Package...