2SK3390 Datasheet | Hitachi Semiconductor

Features - High power output, High gain, High efficiency PG = 17 d B, Pout = 6.31 W, ηadd= 60 % min. (f = 836 MHz) - pact package capable of surface mounting Outline RP8P D 3 1 G 2 S 2 1. Gate 2. Source 3. Drain Note: Marking is “IX”. This Device is sensitive to Electro Static Discharge. An Adequate handling procedure is requested. Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Channel dissipation Channel temperature Storage temperature Note: 1. PW < 1sec, Tch < 150 °C 2. Value at Tc = 25°C Symbol VDSS VGSS ID ID(pulse) Pch Tch Tstg Note1 Note2 Ratings 17 ±10 1 2.5 20 150 - 45 to +150 Unit V V A A W °C °C Electrical Characteristics (Tc = 25°C) Item Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Input capacitance Output capacitance Output Power Added Efficiency Symbol Min IDSS IGSS VGS(off) Ciss Coss Pout ηadd - - 2.2 - - 6.31 60 Typ - - - 27.5 10.5 - - Max 10 ±5 3.0 - - - - Unit µA µA V p F p F W % Test Conditions VDS = 13.7 V, VGS = 0 VGS = ±10V, VDS = 0 ID = 1m A, VDS = 13.7V VGS = 5V, VDS = 0, f = 1MHz VDS = 13.7V, VGS = 0, f = 1MHz VDS = 13.7V, IDO = 0.25A f = 836 MHz, Pin = 126 m W VDS = 13.7V, IDO = 0.25A f = 836 MHz, Pin = 126 m W Rev.0, Aug. 2001, page 2 of 7 Main Characteristics Maximum Channel Power Dissipation Curve Typical Output Characteristics 5 10 V 9V 7V 8V Pch (W) Channel Power Dissipation I D...