2SK975 Datasheet | Hitachi Semiconductor

Features - - - - Low on-resistance High speed switching Low drive current 4 V gate drive device  Can be driven from 5 V source - Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline TO-92 Mod 1 1. Source 2. Drain 3. Gate Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Note: 1. PW ≤ 10 µs, duty cycle ≤ 1% Symbol VDSS VGSS ID I D(pulse)- I DR Pch Tch Tstg Ratings 60 ±20 1.5 4.5 1.5 900 150 - 55 to +150 Unit V V A A A m W °C °C Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Symbol Min V(BR)DSS V(BR)GSS I GSS 60 ±20 - - 1.0 - Typ - - - - - 0.3 0.4 Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note: 1. Pulse test |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr 0.9 - - - - - - - - - 1.5 140 70 20 3 12 50 30 0.9 45 Max - - ±10 100 2.0 0.4 0.55 - - - - - - - - - - Unit V V µA µA V Ω Ω S p F p F p F ns ns ns ns V ns I F = 1.5 A, VGS = 0 I F = 1.5 A, VGS = 0, di F/dt = 50 A/µs I D = 1 A, VGS = 10 V, RL = 30 Ω Test conditions I D = 10 m A, VGS = 0 I G = ±100 µA, VDS = 0 VGS = ±16 V, VDS = 0 VDS = 50 V, VGS = 0 I D = 1 m A, VDS = 10 V I D = 1 A, VGS = 10 V - 1 I D = 1 A, VGS = 4 V - 1 I D = 1 A, VDS = 10 V - 1 VDS = 10 V, VGS = 0, f = 1 MHz Zero gate voltage drain current I DSS Gate to source cutoff voltage Static drain to source on state resistance VGS(off) RDS(off) Power vs. Temperature Derating 1.5 Channel Dissipation Pch (W) 10 µs s 10 0 µ 10 Maximum Safe Operation...