B647 Datasheet | Hitachi Semiconductor

2SB647, 2SB647A Silicon PNP Epitaxial Application - Low frequency power amplifier - plementary pair with 2SD667/A Outline TO-92MOD 1. Emitter 2. Collector 3. Base 3 2 1 .. 2SB647, 2SB647A Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC i C(peak) PC Tj Tstg 2SB647 - 120 - 80 - 5 - 1 - 2 0.9 150 - 55 to +150 2SB647A - 120 - 100 - 5 - 1 - 2 0.9 150 - 55 to +150 Unit V V V A A W °C °C Electrical Characteristics (Ta = 25°C) 2SB647 Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current DC current transfer ratio Symbol Min V(BR)CBO V(BR)CEO V(BR)EBO I CBO h FE1- h FE2 Collector to emitter saturation voltage Base to emitter voltage Gain bandwidth product VCE(sat) VBE f T 2SB647A Max Min - - - - 10 320 - - 1 Typ Max Unit Test conditions - - - - 10 200 - - 1 V V V V µA I C = - 10 µA, IE = 0 I C = - 1 m A, RBE = ∞ I E = - 10 µA, IC = 0 VCB = - 100 V, IE = 0 VCE = - 5 V, I C = - 150 m A- 2 VCE...