C5057
C5057 is Silicon NPN Triple Diffused Planar manufactured by Hitachi Semiconductor.
Features
- High breakdown voltage VCBO = 1700 V
Outline
TO-3PL
1 2 3
1. Base 2. Collector 3. Emitter
2SC5057
Absolute Maximum Ratings (Ta = 25°C)
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector surge current Collector power dissipation Junction temperature Storage temperature Note: 1. Value at TC = 25°C
Symbol VCBO VCEO VEBO IC IC(surge) PC- 1 Tj Tstg
Ratings 1700 900 6 20 25 200 150
- 55 to +150
Unit V V V A A W °C °C
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Collector to emitter breakdown V(BR)CEO voltage
Emitter to base breakdown voltage
V(BR)EBO
Collector to emitter cutoff current
ICES
- DC current transfer ratio
Collector to emitter saturation voltage h FE VCE(sat)
- -
Base to emitter saturation voltage
VBE(sat)
- Fall time tf
- Typ
- -
- -
- -
- Max
- Unit V
Test conditions IC = 10 m A, RBE = ∞
- V
IE = 10 m A, IC = 0
500 µA
VCE = 1700 V, RBE =...
