C5251
C5251 is 2SC5251 manufactured by Hitachi Semiconductor.
Features
- High breakdown voltage VCBO = 1500 V
- High speed switching tf = 0.2 µsec (typ)
- Isolated package TO-3P- FM (N)
Outline
TO-3PFM (N)
1 2 3
1. Base 2. Collector 3. Emitter
Preliminary
2SC5251
Absolute Maximum Ratings (Ta = 25°C)
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Note: 1. Value at TC = 25°C
Symbol VCBO VCEO VEBO IC IC(peak) PC- 1 Tj Tstg
Ratings 1500 800 6 12 24 50 150
- 55 to +150
Unit V V V A A W °C °C
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Collector to emitter breakdown V(BR)CEO voltage
Emitter to base breakdown voltage
V(BR)EBO
Collector cutoff current DC current transfer ratio DC current transfer ratio Collector to emitter saturation voltage
ICES h FE1 h FE2 VCE(sat)
- 8 5
- Base to emitter saturation voltage
VBE(sat)
- Fall time tf
- Typ
- -
- -
- -
- 0.2
Max
- Unit V
Test conditions IC = 10 m A, RBE = ∞
- V
IE = 10 m A, IC =...
