D669
D669 is 2SD669 manufactured by Hitachi Semiconductor.
2SD669, 2SD669A
Silicon NPN Epitaxial
Application
Low frequency power amplifier plementary pair with 2SB649/A
Outline
TO-126 MOD
1. Emitter 2. Collector 3. Base
2SD669, 2SD669A
Absolute Maximum Ratings (Ta = 25°C)
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation
Junction temperature Storage temperature Note: 1. Value at TC = 25°C.
Symbol VCBO VCEO VEBO IC I C(peak) PC PC
- 1 Tj Tstg
Ratings 2SD669 180 120 5 1.5 3 1 20 150
- 55 to +150
2SD669A 180 160 5 1.5 3 1 20 150
- 55 to +150
Unit V V V A A W W °C °C
2SD669, 2SD669A
Electrical Characteristics (Ta = 25°C)
2SD669
2SD669A
Item
Symbol Min Typ Max Min Typ Max
Collector to base breakdown voltage
V(BR)CBO
- -
- -
Collector to emitter breakdown voltage
V(BR)CEO
- -
- -
Emitter to base breakdown voltage
V(BR)EBO...