HAF2015RJ Datasheet | Hitachi Semiconductor

Features - - - - - Logic level operation (5 to 6 V Gate drive) High endurance capability against to the short circuit Built- in the over temperature shut- down circuit Temperature hysteresis type. High density mounting. Outline SOP-8 D 7 D 8 2 G Gate resistor 8 Tmperature sencing circuit self return circuit Gate shutdown circuit 1 S D 5 5 7 6 3 1 2 MOS1 D 6 4 G Gate resistor Tmperature sencing circuit self return circuit Gate shutdown circuit 3 S 1, 3 2, 4 5, 6, 7, 8 Source Gate Drain MOS2 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel dissipation Channel temperature Storage temperature Note: 1. 2. 3. 4. Symbol VDSS VGSS VGSS ID I D(pulse) I DR I AP Note4 Note4 Note2 Note3 Note1 Ratings 60 16 - 2.5 2 4 2 0.54 25 2 1.5 150 - 55 to +150 Unit V V V A A A A m J W W °C °C Pch Pch Tch Tstg PW ≤ 10 µs, duty cycle ≤ 1 % 1 Drive operation : When using the glass epoxy board (FR4 40 × 40 × 1.6mm), PW ≤ 10s 2 Drive operation : When using the glass epoxy board (FR4 40 × 40 × 1.6mm), PW ≤ 10s Tch = 25°C , Rg > 50 Ω Typical Operation Characteristics Item Input voltage Symbol VIH VIL Input current (Gate non shut down) I IH1 I IH2 I IL Input current (Gate shut down) Shut down temperature Hysteresis temperature Gate operation voltage I IH(sd)1 I IH(sd)2 Tsd Thr Vop Min 3.5 - - - - - - - - 3.5 Typ - - - -...