HAT1031T Datasheet | Hitachi Semiconductor

Features - - - - Low on-resistance Capable of 2.5 V gate drive Low drive current High density mounting Outline TSSOP- 8 65 34 1 D 8 D 4 G 5 G S S 2 3 S S 6 7 1, 8 Drain 2, 3, 6, 7 Source 4, 5 Gate MOS1 MOS2 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Symbol VDSS VGSS ID I D(pulse) Note1 Ratings - 20 ±10 - 2.5 - 20 - 2.5 Unit V V A A A W W °C °C Body- drain diode reverse drain current I DR Channel dissipation Channel dissipation Channel temperature Storage temperature Note: Pch Pch Tch Tstg Note2 Note3 1 1.5 150 - 55 to +150 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. 1 Drive operation ; When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW≤ 10s 3. 2 Drive operation ; When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW≤ 10s Electrical Characteristics (Ta = 25°C) Item Symbol Min - 20 ±10 - - - 0.5 - - 2.6 - - - - - -...