HAT1033T
HAT1033T is Silicon P-Channel Power MOSFET manufactured by Hitachi Semiconductor.
Features
- -
- - Low on-resistance Capable of 2.5 V gate drive Low drive current High density mounting
Outline
TSSOP- 8
65 34
12 1 5 8 D D D
4 G
S S S S 2 3 6 7
1, 5, 8 Drain 2, 3, 6, 7 Source 4 Gate
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Symbol VDSS VGSS ID I D(pulse)
Note1
Ratings
- 20 ± 10
- 3.5
- 28
- 3.5
Unit V V A A A W °C °C
Body- drain diode reverse drain current I DR Channel dissipation Channel temperature Storage temperature Note: Pch Tch Tstg
Note2
1.3 150
- 55 to + 150
1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW≤ 10s
Electrical Characteristics (Ta = 25°C)
Item Drain to source breakdow voltage Symbol Min V(BR)DSS
- 20 ± 10
- -
- 0.4
- - 5
- -
- -
- -
- -
- Typ
- -
- -
- 0.046 0.061 8.0 970 510 150 16 100 245 75 Max
- - ±...
