HAT1043M Datasheet | Hitachi Semiconductor

Features - - - - Low on-resistance Low drive current High density mounting 2.5 V gate drive device can be driven from 3 V source Outline TSOP- 6 4 5 6 1 2 5 6 D D D D 2 1 3 G 3 4 Source 3 Gate 1, 2, 5, 6 Drain S 4 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Symbol VDSS VGSS ID I D(pulse) I DR Note 1 Note 2 Note 2 Note 3 Ratings - 20 ±12 - 4.4 - 17.6 - 4.4 2.0 1.05 150 - 55 to +150 Unit V V A A A W W °C °C Pch (pulse) Pch (continuous) Channel temperature Storage temperature Note: Tch Tstg 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. When using the alumina ceramic board (50 x 50 x 0.7 mm), PW ≤ 5 s, Ta = 25°C 3. When using the alumina ceramic board (50 x 50 x 0.7 mm), Ta = 25°C Electrical Characteristics (Ta = 25°C) Item Symbol Min - 20 - - - 0.4 - - |yfs| Ciss Coss Crss Qg Qgs Qgd t d(on) tr t d(off) tf VDF t rr 4 - - - - - - - - - - - - Typ - - - - 55 85 7 750 310 220 11 2 3.5 15 100 85 100 - 0.95 50 Max - ±0.1 - 1 - 1.4 65 110 - -...